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Single Crystal GGG Substrate CZ Growth With Good Physical / Mechanical Properties

Single Crystal GGG Substrate CZ Growth With Good Physical / Mechanical Properties

Single Crystal GGG Substrate CZ Growth With Good Physical / Mechanical Properties

Product Details:

Place of Origin: China
Brand Name: OEM
Certification: ISO9001

Payment & Shipping Terms:

Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after received your payment details working days after received your payment details
Payment Terms: T/T, Western Union, L/C
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Detailed Product Description
Crystal Structure: Cubic A=12.376Å Hardness: ~8 (Mohn)
Density: 7.09 G/cm3 Surface Roughness: <= 0.5 Nm
Growth Method: CZ Melt Point: 1800 °C
High Light:

silicon wafer substrate

,

silicon oxide wafer

 

GGG single crystal with good physical and mechanical properties and chemical stability

 

Breif intruduction of GGG single crystal

 

(Gd3Ga5O12) single crystal is the special substrate used for magneto-optic thin film  (YIG or BIG film).

 

In optical communication equipment, YIG or BIG film is the core component of 1.3 and 1.5 optical isolator.

 

Different crystallographic orientation of GGG single crystal substrate can best lattice matching with this kind of film.

 

GGG has good physical and mechanical properties and chemical stability, so as to ensure the growth of epitaxial film successfully.

 

Typical Physical Properties of GGG single crystal

 

Crystal Structure Cubic a=12.376Å
Growth Method CZ
Density 7.09 g/cm3
Melt Point 1800 °C
Hardness ~8 (Mohn)
Purity > 99.99%
Surface Roughness <= 0.5 nm
Crystal growth orientation <111>
Chemical Stability Insoluble in water

 

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